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MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
A Device of the mXTM Family
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35 VOLTS 2.0 AMPS PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -35 -55 -5.0 -2.0 -5.0 Unit Vdc Vdc Vdc Adc A 4 EMITTER 3 BASE COLLECTOR 1, 2, 5, 6
HBM Class 3 MM Class C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead #1 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 9 Symbol PD (Note 1.) Max 625 5.0 RJA (Note 1.) PD (Note 2.) 200 1.0 8.0 RJA (Note 2.) RJL PDsingle (Notes 2. & 3.) TJ, Tstg 120 80 1.75 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W 4 5 6
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CASE 318G TSOP STYLE 6
DEVICE MARKING
G4 (date code) W C
ORDERING INFORMATION
Device MBT35200MT1 Package Case 318G Shipping 3000/Tape & Reel
(c) Semiconductor Components Industries, LLC, 2000
1
August, 2000 - Rev. 1
Publication Order Number: MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -35 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -35 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) V(BR)CEO -35 V(BR)CBO -55 V(BR)EBO -5.0 ICBO -- ICES -- IEBO -- -0.01 -0.1 -0.03 -0.1 mAdc -0.03 -0.1 mAdc -7.0 -- mAdc -65 -- Vdc -45 -- Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (1) (IC = -1.0 A, VCE = -1.5 V) (IC = -1.5 A, VCE = -1.5 V) (IC = -2.0 A, VCE = -3.0 V) Collector-Emitter Saturation Voltage (Note 4.) (IC = -0.8 A, IB = -0.008 A) (IC = -1.2 A, IB = -0.012 A) (IC = -2.0 A, IB = -0.02 A) Base-Emitter Saturation Voltage (Note 4.) (IC = -1.2 A, IB = -0.012 A) Base-Emitter Turn-on Voltage (Note 4.) (IC = -2.0 A, VCE = -3.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Turn-on Time (VCC = -10 V, IB1 = -100 mA, IC = -1 A, RL = 3 W) Turn-off Time (VCC = -10 V, IB1 = IB2 = -100 mA, IC = 1 A, RL = 3 W) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 100 VCE(sat) -- -- -- VBE(sat) -- VBE(on) -- fT 100 Cibo Cobo ton toff -- -- -- -- -- 600 85 35 225 -- 650 100 -- -- pF pF nS nS -0.81 -0.875 MHz -0.68 -0.85 V -0.125 -0.175 -0.260 -0.15 -0.20 -0.31 V 200 200 200 -- 400 -- V
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MBT35200MT1
VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.25 IC/IB = 50 0.20 100C 0.15 25C 0.10 0.05 0 -55C
0.1
IC/IB = 100 50 10
0.01
0.001
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Saturation Voltage versus Collector Current
1.6 hFE , DC CURRENT GAIN (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 -55C 100C 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.8 0.6 0.4 0.2 0
Figure 2. Collector Emitter Saturation Voltage versus Collector Current
-55C 25C 100C
25C
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS) 1.1 C ibo , INPUT CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1.0 100C 25C -55C 750 700 650 600 550 500 450 400 350 300 0
Figure 4. Base Emitter Saturation Voltage versus Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE (VOLTS)
Figure 5. Base Emitter Turn-On Voltage versus Collector Current
Figure 6. Input Capacitance
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MBT35200MT1
225 Cobo, OUTPUT CAPACITANCE (pF) IC , COLLECTOR CURRENT (AMPS) 200 175 150 125 100 75 50 25 0 0 5.0 10 15 20 25 30 35 0.01 0.1 10 1 s 100 ms 10 ms 1 ms 100 ms
1.0 DC
0.1
SINGLE PULSE AT Tamb = 25C 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
0.001
Figure 9. Normalized Thermal Response
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MBT35200MT1 INFORMATION FOR USING THE TSOP-6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.094 2.4
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm
TSOP-6 TSOP-6 POWER DISSIPATION The power dissipation of the TSOP-6 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the TSOP-6 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 625 milliwatts.
PD = 150C - 25C 200C/W = 625 milliwatts
The 200C/W for the TSOP-6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 625 milliwatts. There are other alternatives to achieving higher power dissipation from the TSOP-6 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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MBT35200MT1
PACKAGE DIMENSIONS CASE 318G-02 ISSUE G
A L
6 5 1 2 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
B
D G M 0.05 (0.002) H C K J
STYLE 6: PIN 1. 2. 3. 4. 5. 6.
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MBT35200MT1
Notes
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MBT35200MT1
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MBT35200MT1/D

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